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ÄHNLICHE W6NXD3L-0000

W6NXD3L-0000 OPTOELEKTRONIK DER DATENBLATT

Transistorgehäuse :

Hersteller : Cree

Pins :

Beschreibung : Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

Betriebstemperaturbereich : Min °C | Max °C

W6NXD3L-0000 PDF


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