Transistorgehäuse :
Hersteller : Cree
Pins :
Beschreibung : Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Betriebstemperaturbereich : Min °C | Max °C